沈洁

简介


现任中国科学院物理研究所特聘研究员。2008年在东南大学获得学士学位,2013年中科院物理所获得博士学位,先后在耶鲁大学(2013-2015)、荷兰代尔夫特理工大学实验室(2015-2019)做博士后。

主要研究方向


拓扑量子计算
      在过去的近50年间,随着人类社会全面进入信息技术时代,无论是日常生活还是科学研究对计算机的计算能力要求越来越高。根据摩尔定律,每隔18个月计算机的性能翻两倍,芯片越做越小。但随之问题也接踵而至,一是目前的芯片尺寸达到了工业界器件合成的极限(~10纳米),二是量子效应随尺寸的减小而越来越明显,影响性能。此时,量子计算机呼之欲出。
      经典计算机由比特产生0或1两种态来构成二进制计算,计算能力与比特数量N的关系可表示为2N(线性增加)。而量子计算机构建在具有双能级系统 a |0> + b |1> 的量子比特上,量子比特处于双能级的叠加态从而可进行平行计算,故计算能力是2N(指数增加),远超经典计算机。然而,多个量子比特的纠缠极易受到环境噪声的破坏,导致保真度(fidelity)降低,增加计算中错误的几率。所以如何在增加量子比特数量的同时提高保真度是建立可扩展的量子计算芯片面对的核心问题。
      拓扑量子比特是利用系统本身的拓扑性质,通过对非阿贝尔任意子在2+1维空间下编织(braiding)而进行非定域的编码,具有免于环境噪声干扰的鲁棒性(robustness),从而提高保真度。欧美为发展拓扑量子计算已投入了大量资金,微软和IBM都已经组建了部门进行相关的研究。目前拓扑量子计算还处在初步研究的阶段——尝试建立第一个拓扑量子比特,但发展十分迅猛,有望在未来几年有所突破。因此,此时正是投入拓扑量子计算、抓住契机的合适时机。

实验室主页:
http://tsuilab.iphy.ac.cn/index.html
 

过去的主要工作及获得的成果



      

代表性论文及专利


Published as the first author or corresponding author
1) Qu, F. M.*, Yang, F.*, Shen, J.*, Ding, Y., Chen, J., Ji, Z. Q., Liu, G. T., Fan, J., Jing, X. N., Yang, C. L., & Lu, L. (*The first three authors contributed equally to this work.)  Strong superconducting proximity effect in Pb-Bi2Te3 hybrid structures. Scientific reports 2, 339 (2012)
2) Chang, C. Z.*, Zhang, J. S.*, Feng, X.*, Shen, J.*, Zhang, Z. C, Guo, M. H., Li, K., Ou, Y. B., Wei, P., Wang, L. L., Ji, Z. Q., Feng, Y., Ji, S. H., Chen, X., Jia, J. F., Dai, X., Fang, Z., Zhang, S. C., He, K.†, Wang, Y. Y.†, Lu, L., Ma, X. C., & Xue, Q. K.† (*The first four authors contributed equally to this work.)Experimental observation of the quantum anomalous hall effect in a magnetic topological insulator. Science 340, 167-170 (2013)- the first paper about quantum anomalous hall effect, citation is 1313 according to google scholar up to Nov. 19st, 2018
3) Shen, J., Jung, Y., Disa, A. S., Walker, F. J., Ahn, C. H., & Cha, J. J. Synthesis of SnTe Nanoplates with {100} and {111} surfaces. Nano letters 14, 4183-4188 (2014).
4) Shen, J., Song, Y., Lee, M. L., & Cha, J. J. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems. Nanotechnology 25, 465702 (2014).
5) Shen, J., & Cha, J. J. Topological crystalline insulator nanostructures. Nanoscale 6, 14133-14140 (2014). (Review)
6) Shen, J., Xie, Y. J., & Cha, J. J. Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility.Nano letters 15, 3827-3832 (2015).
7) Shen, J., Woods, J.M., Xie, Y. J., Morales-Acosta, M. D. & Cha, J.Structural Phase Transition and Carrier Density Tuning in SnSexTe1-x Nanoplates.Advanced Electronic Materials 2, 1600144 (2016).      
8) Woods, J. M.*, Shen, J.*, Kumaravadivel, P., Pang, Y., Xie, Y., Pan, G. A., ... & Cha, J. J. (*The first two authors contributed equally to this work.) Suppression of magnetoresistance in thin WTe2 flakes by surface oxidation.ACS applied materials & interfaces 9(27), 23175-23180 (2017).
9) de Vries, F.K.*, Shen, J.*, Skolasinski, R. J., Nowak, M. P., Varjas, D., Wang, L., Wimmer, M., Ridderbos, J., Zwanenburg, F.A., Li, A., Koelling, S., Verheijen, M. A., Bakkers, E. P. A. M. & Kouwenhoven. (Shen is the equal contribution and corresponding author)Spin–Orbit Interaction and Induced Superconductivity in a One-Dimensional Hole GasNano letters 18 (10), 6483–6488 (2018).
10) Shen, J., Heedt, S., Borsoi, F., van Heck, B., … Geresdi, A., Palmstrøm, C. J., Bakkers, E. P. A. M. & Kouwenhoven, L. P. (Shen is the equal contribution and corresponding author)Parity transitions in the superconducting ground state of hybrid InSb–Al Coulomb islands.Nature Communications 9, 4801 (2018).
11) de Vries, F.K., Sol, M.L., Gazibegovic, S., op het Veld, R.L., Balk, S.C., Car, D., Bakkers, E.P., Kouwenhoven, L.P. and Shen, J., Crossed Andreev reflection in InSb flake Josephson junctions. Physical Review Research 1(3), 032031(2019)



Published as co-author
1) Jung, Y., Shen, J., Liu, Y., Woods, J. M., Sun, Y., & Cha, J. J. Metal seed layer thickness-induced transition from vertical to horizontal growth of MoS2 and WS2. Nano letters 12, 6842-6849 (2014).
2) Jung, Y., Shen, J., Sun, Y., & Cha, J. J. Chemically Synthesized Heterostructures of Two-Dimensional Molybdenum/Tungsten-Based Dichalcogenides with Vertically Aligned Layers ACS nano, 8, 9550-9557 (2014).
3) Jung, Y., Shen, J., & Cha, J. J. Surface effects on electronic transport of 2D chalcogenide thin films and nanostructures.Nano Convergence 1, 18 (2014). (Review)- recognized as a highly contributed paper by Nano Convergence in 2015
4) Qu, F., Yang, F., Chen, J., Shen, J., Ding, Y., Lu, Lu, J. B., Song, Y. J., Yang, H. X., Liu, G. T., Fan, J., Li, Y. Q., Ji, Z. Q., Yang, C. L. & Lu, L. Aharonov-Casher effect in Bi2Se3 square-ring interferometers. Physical review letters 107, 016802 (2011)
5) Yang, F., Qu, F., Shen, J., Ding, Y., Chen, J., Ji, Z. Q., Liu, G. T., Fan, J., Yang, C. L., Fu, L. & Lu, L. Proximity-effect-induced superconducting phase in the topological insulator Bi2Se3. Physical Review B 86, 134504 (2012).
6) Yang, F., Ding, Y., Qu, F., Shen, J., Chen, J., Wei, Z. C., Ji, Z. Q., Liu, G. T., Fan, J., Yang, C. L., Xiang, T. & Lu, L. Proximity effect at superconducting Sn- Bi2Se3 interface. Physical Review B 85, 104508 (2012).
7) Yu, L., Jung, D., Law, S., Shen, J.=12.0000pt, Cha, J. J., Lee, M. L., & Wasserman, D. Controlling quantum dot energies using submonolayer bandstructure engineering. Applied Physics Letters 105, 081103 (2014).
8) Zhu, X., Morales-Acosta, M.D., Shen, J., Walker, F.J., Cha, J. J., & Altman, E.I. Growth, structure, and electronic properties of nonpolar thin films on a polar substrate: Cr2O3 on ZnO (0001) and ZnO (000 1¯). Physical Review B 92, 165414 (2015).
9) Gazibegovic, S., Car, D., Zhang, Z., Balk, S. K, Logan, J. A., de Moor, M. W. A., Cassidy, M. C., Schmits, R., Xu, D., Wang, G. Z., Krogstrup, P., het Veld, R. L. M. O., Zuo, K., Vos, Y., Shen, J., Bouman, D., Shojaei, B., Pennachio, D., Lee, J. S., van Veldhoven, P. J., Koelling, S., Verheijen, M. A., Kouwenhoven, L. P., Palmstrøm, C. J. & Bakkers, E. P. A. M.Epitaxy of advanced nanowire quantum devices.Nature 548, 434 (2017)
10) Ridderbos, J., Brauns, M., Shen, J., de Vries, F. K., Li, A., Erik PAM Bakkers, E. P. A. M., Brinkman, A., Zwanenburg, F. A.Josephson Effect in a Few‐Hole Quantum Dot Advanced Materials 30, 1802257 (2018)
11) Ma, M., Liu, K., Shen, J., Kas, R., & Smith, W. A.In-situ Fabrication and Reactivation of Highly Selective and Stable Ag Catalysts for Electrochemical CO2 Conversion.ACS Energy Letters, 3 (6), 1301–1306 (2018)
12) Gazibegovic, S., Badawy, G., Buckers, T. L. J., Leubner, P., Shen, J., de Vries, F. K., Koelling, S., Kouwenhoven, L. P., Verheijen, M. A., & Bakkers, E. P. A. M. Bottom‐Up Grown 2D InSb Nanostructures.Advanced Materials 31, 1808181 (2019)
 

目前的研究课题及展望


1. 基于强自旋轨道耦合纳米线的拓扑量子器件
2. 基于铁磁-拓扑超导材料的自旋操控的量子器件

培养研究生情况


招硕士、博士、博士后以及研究助理。待遇可按物理所上限给。

Email

shenjie@iphy.ac.cn